transistor (npn) features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55~ 150 electrical characteristics(t a=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 40v, i e =0 1 a collector cut-off current i ceo v ce = 30v, i b =0 10 a emitter cut-off current i ebo v eb = 6v, i c =0 1 a h fe(1) v ce =2v, i c = 1a 60 400 dc current gain h fe(2) v ce =2v, i c = 100ma 32 collector-emitter saturation voltage v ce(sat) i c = 2a, i b = 0.2 a 0.5 v base-emitter saturation voltage v be(sat) i c = 2a, i b = 0.2 a 1.5 v transition frequency f t v ce = 5v , ic=0.1a f =10mhz 50 mhz classification of h fe(1) rank r o y gr range 60-120 100-200 160-320 200-400 sot-89 1. base 2. collector 3. emitter 2012- 0 willas electronic corp. sot-89 plastic-encapsulate t ransistors D882
0 300 600 900 1200 1 10 100 1000 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1 10 100 1000 1 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 10 100 012345678 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 common emitter v ce = 2v v be i c base-emmiter voltage v be (mv) collector current i c (ma) t a =2 5 t a =1 0 0 3000 =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 3000 p c t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 2000 typical characteristics i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 3000 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob c ib reverse voltage v (v) capacitance c (pf) 20 500 static characteristic common emitter t a =25 10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma i b =1ma collector current i c (a) collector-emitter voltage v ce (v) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate t ransistors D882
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate t ransistors D882
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